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bsf024n03lt3 g opti mos tm 3 power-mosfet features ? optimized for high switching frequency dc/dc converter ? very low on-resistance r ds(on) ? excellent gate charge x r ds(on) product (fom) ? low parasitic inductance ? low profile (<0.7 mm) ? 100% avalanche tested ? 100% rg tested ? double-sided cooling ? pb-free plating; rohs compliant ? compatible with directfet? package st footprint and outline 1) ? qualified according to jedec 2) for target applications maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d v gs =10 v, t c =25 c 106 a v gs =10 v, t c =100 c 67 v gs =10 v, t a =25 c, r thja =58 k/w 2) 15 pulsed drain current 3) i d,pulse t c =25 c 400 avalanche current, single pulse 4) i as t c =25 c 40 avalanche energy, single pulse e as i d =40 a, r gs =25 ? 125 mj gate source voltage v gs 20 v 4) see figure 13 for more detailed information value 1) canpak tm uses directfet ? technology licensed from international rectifier corporation. directfet? is a registered trademark of international rectifier corporation. 2) j-std20 and jesd22 3) see figure 3 for more detailed information v ds 30 v r ds(on),max 2.4 m ? i d 106 a product summary type package outline marking bsf024n03lt3 g mg-wdson-2 st 0703 canpak tm s mg - wdson - 2 rev. 2.0 page 1 2009-06-16
bsf024n03lt3 g maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit power dissipation p tot t c =25 c 42 w t a =25 c, r thja =58 k/w 2.2 operating and storage temperature t j , t stg -40 ... 150 c iec climatic category; din iec 68-1 55/150/56 parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc bottom - 1.0 k/w top - - 3 device on pcb r thja 6 cm 2 cooling area 5) --58 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 30 - - v gate threshold voltage v gs(th) v ds = v gs , i d =250 a 1 - 2.2 zero gate voltage drain current i dss v ds =30 v, v gs =0 v, t j =25 c - 0.1 10 a v ds =30 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 10 100 na drain-source on-state resistance r ds(on) v gs =4.5 v, i d =20 a - 2.6 3.2 m ? drain-source on-state resistance r ds(on) v gs =10 v, i d =20 a - 2.0 2.4 gate resistance r g 0.2 0.5 0.8 ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =30 a 55 110 - s value values 5) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. rev. 2.0 page 2 2009-06-16
bsf024n03lt3 g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 4100 5500 pf output capacitance c oss - 1730 2300 reverse transfer capacitance c rss -84- turn-on delay time t d(on) - 5.7 - ns rise time t r - 5.6 - turn-off delay time t d(off) -29- fall time t f - 4.8 - gate char g e characteristics 6) gate to source charge q gs - 11.9 - nc gate charge at threshold q g(th) - 6.6 - gate to drain charge q gd - 5.8 - switching charge q sw - 11.1 - gate charge total q g -2634 gate plateau voltage v plateau - 2.9 - v gate charge total q g v dd =15 v, i d =30 a, v gs =0 to 10 v -5371 gate charge total, sync. fet q g(sync) v ds =0.1 v, v gs =0 to 4.5 v -22-nc output charge q oss v dd =15 v, v gs =0 v -36- reverse diode diode continuous forward current i s - - 38 a diode pulse current i s,pulse - - 400 diode forward voltage v sd v gs =0 v, i f =30 a, t j =25 c - 0.81 v reverse recovery charge q rr v r =15 v, i f = i s , d i f /d t =400 a/s - - 28 nc 6) see figure 16 for gate charge parameter definition t c =25 c values v gs =0 v, v ds =15 v, f =1 mhz v dd =15 v, v gs =10 v, i d =30 a, r g =1.6 ? v dd =15 v, i d =30 a, v gs =0 to 4.5 v rev. 2.0 page 3 2009-06-16
bsf024n03lt3 g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 2 10 1 10 0 10 -1 10 3 10 2 10 1 10 0 10 -1 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 1 10 0 10 -1 10 -2 10 -3 t p [s] z thjc [k/w] 0 10 20 30 40 50 0 40 80 120 160 t c [c] p tot [w] 0 40 80 120 0 40 80 120 160 t c [c] i d [a] rev. 2.0 page 4 2009-06-16
bsf024n03lt3 g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 3 v 3.2 v 3.5 v 4 v 4.5 v 5 v 7 v 10 v 0 4 8 12 0 1020304050 i d [a] r ds(on) [m ? ] 25 c 150 c 0 20 40 60 80 100 120 140 160 012345 v gs [v] i d [a] 0 40 80 120 160 200 240 0 40 80 120 160 i d [a] g fs [s] 2.8 v 3 v 3.2 v 3.5 v 4 v 4.5 v 5 v 10 v 0 80 160 240 320 400 0123 v ds [v] i d [a] rev. 2.0 page 5 2009-06-16
bsf024n03lt3 g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =20 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds ; i d =250 a 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 1 2 3 4 5 6 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 4 10 3 10 2 10 1 0 102030 v ds [v] c [pf] 25 c 150 c 25 c, 98% 150 c, 98% 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 v sd [v] i f [a] rev. 2.0 page 6 2009-06-16
bsf024n03lt3 g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =30 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 20 22 24 26 28 30 32 34 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 125 c 1 10 100 1 10 100 1000 t av [s] i av [a] 6 v 15 v 24 v 0 2 4 6 8 10 12 0 102030405060 q gate [nc] v gs [v] rev. 2.0 page 7 2009-06-16
bsf024n03lt3 g package outline rev. 2.0 page 8 2009-06-16
bsf024n03lt3 g package outline canpak pg-tdson-8: tape dimensions in mm rev. 2.0 page 9 2009-06-16
bsf024n03lt3 g dimensions in mm recommended stencil thikness 150 m rev. 2.0 page 10 2009-06-16
bsf024n03lt3 g published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 2.0 page 11 2009-06-16

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